Effect of deep-level impurities on the open-circuit voltage of an MIS solar cell
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=8/a=020/pdf
Reference24 articles.
1. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment
2. Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. Experiment
3. A 15% efficient antireflection‐coated metal‐oxide‐semiconductor solar cell
4. An Alp‐silicon MOS photovoltaic cell
5. Open‐circuit voltage of MIS silicon solar cells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of deep-level impurities on the drain characteristics of short-channel metal-semiconductor field effect transistors;Semiconductor Science and Technology;1998-02-01
2. Barrier Height of MIS-Tunnel Diode in Presence of Exponential Distribution of Deep Level Impurities;IETE Journal of Research;1997-11
3. Capacitance-voltage characteristics of Schottky barrier diode in the presence of deep-level impurities and series resistance;Applied Surface Science;1995-06
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