Diffusion of dopants in tungsten disilicide: effects of diffusion paths-Reference-Cited by-同舟云学术

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Diffusion of dopants in tungsten disilicide: effects of diffusion paths

Published:1991-11 Issue: Volume:53 Page:165-170
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Thomas O.,Scilla G.,Gas P.,Cotte J.,Joshi R.V.,Bakli M.,Göltz G.,d'Heurle F.M.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference19 articles.

1. The behavior of boron (also arsenic) in bilayers of polycrystalline silicon and tungsten disilicide

2. Dopant diffusion in tungsten silicide

3. Diffusion of Sb, Ga, Ge, and (As) in TiSi2

4. The diffusion of elements implanted in films of cobalt disilicide

5. Electronic transport properties of thin films of WSi2and MoSi2

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of WSI2 by rapid thermal annealing of CVD thin films of tungsten;Vacuum;1998-10

2. Preparation of WSi2 by RTA Annealing of CVD-W thin Films;MRS Proceedings;1995

3. Diffusion of elements implanted in amorphous titanium disilicide;Applied Surface Science;1993-11

4. Dopant diffusion in silicides: Effect of diffusion paths;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1992-07

5. Cobalt lattice diffusion in bulk cobalt disilicide;Applied Surface Science;1991-11

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