Dopant diffusion in tungsten silicide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331050
Reference5 articles.
1. Refractory silicides for integrated circuits
2. 1 µm MOSFET VLSI technology: Part VII—Metal silicide interconnection technology—A future perspective
3. Composite silicide gate electrodes—Interconnections for VLSI device technologies
4. Oxidation mechanisms in WSi2thin films
5. Oxidation mechanisms in WSi2thin films
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1. Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices;Japanese Journal of Applied Physics;2008-04-25
2. Silicides and ohmic contacts;Materials Chemistry and Physics;1998-02
3. Electrical Characteristics of a WSi x Contact Electrode with a WSi x N Diffusion Barrier Formed by Using Electron Cyclotron Resonance Plasma Nitridation;Journal of The Electrochemical Society;1997-11-01
4. Formation and mechanism of dimple/pit on Si substrate during WSi[sub x]/poly-Si gate stack etch;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-09
5. Dual-polycide gate technology using regrowth amorphous-Si to suppress lateral dopant diffusion;IEEE Transactions on Electron Devices;1997
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