Atomic-hydrogen-induced desorption of fluorine from silicon surfaces
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference12 articles.
1. Surface Cleaning for Si Epitaxy Using Photoexcited Fluorine Gas
2. New insights on the effect of hydrogen to tungsten hexafluoride partial pressure ratio on plasma deposited tungsten thin films
3. Silicon Surface Cleaning Using Photoexcited Fluorine Gas Diluted with Hydrogen
4. Hydrogen-halogen chemistry on semiconductor surfaces
5. Atomic H: A reagent for the extraction of chemical species from Si surfaces
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1. Kinetics of HfO2 etching and impurity elimination with atomic hydrogen beams;Applied Surface Science;2021-11
2. Oxidation of deuterium-, acetylene-, and ethylene-terminated Si(100) by atomic oxygen;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-01
3. Study of fluorine contamination on MgO(100) surfaces;Vacuum;1999-01
4. Reactions of atomic deuterium with C2D5Br on Si(100);Surface Science;1998-08
5. Thermal Desorption Study on Silicon Surfaces during Fluorine Removal Process with Atomic Deuterium Exposure;Japanese Journal of Applied Physics;1996-03-15
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