Indium sulfide-based electron-selective contact and dopant-free heterojunction silicon solar cells-Reference-Cited by-同舟云学术

Indium sulfide-based electron-selective contact and dopant-free heterojunction silicon solar cells

Published:2020-11 Issue: Volume:211 Page:759-766
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Meng Lanxiang,Yao Zhirong,Cai Lun,Wang Wenxian,Zhang LinKun,Qiu Kaifu,Lin Wenjie,Shen Hui^ORCID,Liang Zongcun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference57 articles.

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3. New Cd-free buffer layer deposited by PVD: In2S3 containing Na compounds;Barreau;Thin Solid Films,2003

4. Efficient silicon solar cells with dopant-free asymmetric heterocontacts;Bullock;Nat. Energy,2016

5. Stable dopant-free asymmetric heterocontact silicon solar cells with efficiencies above 20%;Bullock;ACS Energy Lett.,2018

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3. Interfacial defect healing of In₂S₃/Sb₂(S,Se)₃ heterojunction solar cells with a novel wide-bandgap InOCl passivator;Journal of Materials Chemistry A;2023

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