Comparison between textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance analysis-Reference-Cited by-同舟云学术

Comparison between textured SnO2:F and Mo contacts with the p-type layer in p–i–n hydrogenate amorphous silicon solar cells by forward bias impedance analysis

Published:2013-02 Issue: Volume:88 Page:175-181
ISSN:0038-092X
Container-title:Solar Energy
language:en
Short-container-title:Solar Energy

Author:

Cannella G.,Principato F.,Foti M.,Gerardi C.,Lombardo S.

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference21 articles.

1. Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction

2. Capacitance study of thin film SnO2 :F/p-type a-Si:H heterojunctions

3. RF technique for determining ambipolar carrier lifetime in pin RF switching diodes

4. The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes

5. Nonlinear stored charge vs d.c. bias-current relationship under high-level injection in pin diodes

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