RF technique for determining ambipolar carrier lifetime in pin RF switching diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19981568?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Ramp recovery in p-i-n diodes: General mathematical formulation and comparison with other methods of lifetime measurement
2. A new method for carrier lifetime measurements in PIN diodes
3. The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes
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