The Influence of Doping the Active Layer P on the Electrical Parameter of the Solar Cell PIN Based on InGaN
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-2777-7_42
Reference17 articles.
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4. X. Shen, S. Lin, F. Li et al., Simulation of the InGaN-based tandem solar cells, in Photovoltaic Cell and Module Technologies II, eds by B. von Roedern, A.E. Delahoy, vol. 7045 of Proceedings of SPIE, August (2008)
5. S.W. Feng, C.M. Lai, C.H. Chen, W.C. Sun, L.W. Tu, Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells. J. Appl. Phys. 108(9) (2010). https://doi.org/10.1063/1.3484040
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