Ramp recovery in p-i-n diodes: General mathematical formulation and comparison with other methods of lifetime measurement
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Correlations between reverse recovery time and lifetime of p-n junction driven by a current ramp
2. Ramp recovery in p-i-n diodes
3. Carrier lifetime measurement by ramp recovery of p-i-n diodes
4. A generalised approach to lifetime measurement in pn junction solar cells
5. Determination of carrier lifetime from rectifier ramp recovery waveform
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1. An Optimization Method of a Digital Active Gate Driver Under Continuous Switching Operation Being Capable of Suppressing Surge Voltage and Power Loss in PWM Inverters;IEEE Transactions on Industry Applications;2022-01
2. New method for the determination of carrier lifetime in diodes using a sinusoidal current pulse;Solid-State Electronics;1998-05
3. RF technique for determining ambipolar carrier lifetime in pin RF switching diodes;Electronics Letters;1998
4. Open-circuit voltage decay in polycrystalline silicon solar cells;Solar Energy Materials and Solar Cells;1995-07
5. Modified differential open-circuit-voltage decay method for lifetime measurement in p-n junctions;Solid-State Electronics;1993-03
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