Carrier transport mechanism in the SnO2:F/p-type a-Si:H heterojunction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3606408
Reference29 articles.
1. Analysis of TCO/p(a-Si:C:H) heterojunction and its influence on p-i-n a-Si:H solar cell performance
2. Influence of the front contact barrier height on the Indium Tin Oxide/hydrogenated p-doped amorphous silicon heterojunction solar cells
3. Barrier at the interface between amorphous silicon and transparent conducting oxides and its influence on solar cell performance
4. Determining height of a leaky Schottky barrier existing in the junction between SnO2and a highly dopedp‐type amorphous SiC by using the pulsed laser‐induced transient photopotential technique
5. The effect of surface states at the SnO2/p-a-Si:H interface
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3. Surface and interface properties of ZrO2/GaAs, SiO2/GaAs and GaP/GaAs hetero structures investigated by surface photovoltage spectroscopy;Applied Surface Science;2019-05
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