Influence of single-ionized oxygen vacancies on the generation of ferromagnetism in SnO2 and SnO2:Cr nanowires
-
Published:2023-07-04
Issue:8
Volume:129
Page:
-
ISSN:0947-8396
-
Container-title:Applied Physics A
-
language:en
-
Short-container-title:Appl. Phys. A
Author:
Montalvo D., Gómez V., de la Cruz W., Camacho-López S., Rivero I., Carrera K., Orozco V., Santillán C., Matutes J., Herrera-Zaldívar M.ORCID
Abstract
AbstractIn this work, we report the influence of single-ionized oxygen vacancies ($$V^{\prime}_{{\text{O}}}$$
V
O
′
) as a spin ½ system in the ferromagnetic response of undoped and Cr-doped SnO2 nanowires. For this study, undoped and Cr-doped SnO2 nanowires were synthesized by a thermal evaporation method. Raman, Auger, and X-ray photoelectron spectroscopies confirmed the incorporation of Cr3+ ions in the SnO2 lattice. Electron paramagnetic resonance measurements demonstrated the presence of single-ionized oxygen vacancies ($$V^{\prime}_{{\text{O}}}$$
V
O
′
) in undoped and Cr-doped nanowires. Complementarily, cathodoluminescence measurements confirmed the presence of VO defects in the samples. Magnetic measurements revealed FM behavior from the undoped SnO2 and Cr-doped SnO2 nanowires, showing magnetization saturation values (MS) of ± 1 × 10–3 and ± 1.6 × 10–3 emu/g, respectively, and magnetic coercivity values (HC) of 180 and 200 Oe. We assign the FM response of nanowires to the presence of single ionized $$V^{\prime}_{{\text{O}}}$$
V
O
′
acting as a spin ½ system and to the alignment of magnetic moments of Cr3+ ions, finding that $$V^{\prime}_{{\text{O}}}$$
V
O
′
defects dominate in the FM generation.
Funder
conacyt University of California, Riverside
Publisher
Springer Science and Business Media LLC
Subject
General Materials Science,General Chemistry
Reference54 articles.
1. X.M. Yin, C.C. Li, M. Zhang, Q.Y. Hao, S. Liu, Q.H. Li, L.B. Chen, T.H. Wang, Nanotechnology 20, 455503 (2009) 2. G. Cannella, F. Principato, M. Foti, J. Appl. Phys 110, 24502 (2011) 3. S.-G. Zhang, S.-F. Yin, Y.-D. Wei, S.-L. Luo, C.-T. Au, Mater. Lett. 79, 29 (2012) 4. C.B. Fitzgerald, M. Venkatesan, L.S. Dorneles, R. Gunning, P. Stamenov, J.M.D. Coey, P.A. Stampe, R.J. Kennedy, E.C. Moreira, U.S. Sias, Phys. Rev. B 74, 115307 (2006) 5. J. Chi, H. Ge, J. Wang, J. Appl. Phys 110, 83907 (2011)
|
|