Development and prospects of surface passivation schemes for high-efficiency c-Si solar cells

Author:

ur Rehman Atteq,Iqbal Muhammad Zahir,Bhopal Muhammad Fahad,Khan Muhammad Farooq,Hussain Farhan,Iqbal Javed,Khan Mahmood,Lee Soo Hong

Funder

Korea Institute of Energy Technology Evaluation and Planning

Ministry of Trade, Industry & Energy

Ministry of Trade, Industry and Energy

Korea Evaluation Institute of Industrial Technology

Higher Education Commission

Publisher

Elsevier BV

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Reference94 articles.

1. Aberle A, Warta W, Knobloch J, Voss B, 1990. Surface passivation of high efficiency silicon solar cells. In: Photovoltaic Specialists Conference, Conference Record of the Twenty First IEEE: IEEE, 1990. pp. 233–8.

2. Aberle AG, 1999. Crystalline silicon solar cells: advanced surface passivation and analysis: Centre for Photovoltaic Engineering. University of New South Wales.

3. Surface passivation of crystalline silicon solar cells: a review;Aberle;Prog. Photovoltaics Res. Appl.,2000

4. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO interface;Aberle;J. Appl. Phys.,1992

5. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge;Agostinelli;Sol. Energy Mater. Sol. Cells,2006

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