Fundamental technologies for gallium oxide transistors
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Elsevier
Reference57 articles.
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2. Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy;Asel;J. Vac. Sci. Technol. A,2020
3. Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage;Chabak;Appl. Phys. Lett.,2016
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1. Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films;Japanese Journal of Applied Physics;2023-04-12
2. Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga2O3 Layers;Crystals;2022-12-09
3. Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications;Nanomaterials;2022-06-15
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