Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy

Published:2020-07 Issue:4 Volume:38 Page:043403
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Asel Thaddeus J.¹²,Steinbrunner Erich¹³,Hendricks Jessica¹⁴⁵,Neal Adam T.¹^ORCID,Mou Shin¹^ORCID

Affiliation:

1. Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright Patterson AFB, Ohio 45433

2. UES Inc., 4401 Dayton Xenia Rd., Dayton, Ohio 45432

3. Department of Electrical Engineering, Wright State University, Dayton, Ohio 45435

4. Department of Engineering Physics, Air Force Institute of Technology, Wright Patterson AFB, Ohio 45433

5. Southwestern Ohio Council for Higher Education, Dayton, Ohio 45420

Funder

Air Force Office of Scientific Research

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/am-pdf/10.1116/6.0000086

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films;Journal of Applied Physics;2024-03-14

2. Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure;Applied Physics Letters;2024-03-11

3. Modelling of impedance dispersion in lateral β-Ga₂O₃ MOSFETs due to parallel conductive Si-accumulation layer;Applied Physics Express;2023-04-01

4. Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy;APL Materials;2023-04-01

5. Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy;APL Materials;2023-04-01

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