Mechanism of resistance distribution properties in oxide-based resistance switching nanodevice
Author:
Funder
National Research Foundation of Korea
Ministry of Trade, Industry and Energy
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference21 articles.
1. Modeling for bipolar resistive memory switching in transition-metal oxides
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1. Universal Memory Characteristics and Degradation Features of ZrO 2 ‐Based Bipolar Resistive Memory;Advanced Electronic Materials;2020-07-21
2. First principles study of oxygen vacancy activation energy barrier in zirconia-based resistive memory;Scientific Reports;2020-03-25
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