Indium distribution and light emission in wurtzite InGaN alloys: Several-atom In-N clusters
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference68 articles.
1. Unusual properties of the fundamental band gap of InN
2. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
3. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
4. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
5. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
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