Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption
Author:
Affiliation:
1. State Key Laboratory for Mesoscopic Physics and Department of Physics
2. Peking University
3. Beijing 100871
4. P. R. China
5. College of Physics and Electronic Information
6. Inner Mongolia Normal University
7. Hohhot 010022
Abstract
The n-type conductivity of h-BN monolayers is improved significantly via doping, applying strain and alkali-metal atom adsorption.
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C5RA25141A
Reference52 articles.
1. Two-dimensional material nanophotonics
2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
3. Large-Scale Fabrication of Boron Nitride Nanosheets and Their Utilization in Polymeric Composites with Improved Thermal and Mechanical Properties
4. Growth of Large Single-Crystalline Two-Dimensional Boron Nitride Hexagons on Electropolished Copper
5. Large area hexagonal boron nitride monolayer as efficient atomically thick insulating coating against friction and oxidation
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