Investigation of the hydrogen and impurity contents of amorphous silicon by secondary ion mass spectrometry
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference14 articles.
1. Secondary ion quadrupole mass spectrometer for depth profiling—design and performance evaluation
2. Depth Profiling of n‐Type Dopants in Si and GaAs Using Cs+ Bombardment Negative Secondary Ion Mass Spectrometry in Ultrahigh Vacuum
3. Evaluation of a cesium positive ion source for secondary ion mass spectrometry
4. Hydrogen ion implantation profiles as determined by SIMS
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Crystallite distribution analysis based on hydrogen content in thin-film nanocrystalline silicon solar cells by atom probe tomography;Applied Physics Express;2020-12-16
2. Application of Elastic Recoil Detection in Materials Analysis;Application of Particle and Laser Beams in Materials Technology;1995
3. Effect of carbon impurities on the density of states and the stability of hydrogenated amorphous silicon;Physical Review B;1994-12-15
4. Elastic recoil detection;Reports on Progress in Physics;1993-07-01
5. Impurity Content and Defect Density in 42 a-Si:H Films;MRS Proceedings;1993-01-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3