Abstract
Abstract
The three-dimensional (3D) distribution of nanosized silicon (Si) crystallites within a hydrogenated nanocrystalline Si (nc-Si:H) material is examined by laser-assisted atom probe tomography (APT). The amorphous and crystalline phases in nc-Si:H are distinguished by obtaining the 3D density distribution of H atoms, because the former contains a high H density. The H content in the amorphous phase is estimated to be approximately 15 at% by APT, which is consistent with that obtained by infrared spectroscopy. Thus, the 3D analysis of H distribution via APT is a powerful method to visualize the real shape of nanosized crystallites within nc-Si:H materials.
Funder
JSPS KAKENHI
New Energy and Industrial Technology Development Organization
Subject
General Physics and Astronomy,General Engineering
Cited by
2 articles.
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