Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells-Reference-Cited by-同舟云学术

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Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells

Published:2013-08 Issue: Volume:115 Page:151-156
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Barraud L.,Holman Z.C.,Badel N.,Reiss P.,Descoeudres A.,Battaglia C.,De Wolf S.,Ballif C.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. High-efficiency silicon heterojunction solar cells: a review;De Wolf;Green,2012

2. Development of new a-Si/c-Si heterojunction solar cells: ACJ-HIT (artificially constructed junction-heterojunction with intrinsic thin-layer);Tanaka;Japanese Journal of Applied Physics,1992

3. Nature of doped a-Si:H/c-Si interface recombination;De Wolf;Journal of Applied Physics,2009

4. Amorphous silicon as a passivant for crystalline silicon;Pankove;Applied Physics Letters,1979

5. Stretched-exponential a-Si:H/c-Si interface recombination decay;De Wolf;Applied Physics Letters,2008

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