Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application-Reference-Cited by-同舟云学术

Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

Published:2014-01 Issue: Volume:120 Page:204-208
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Duttagupta Shubham,Ma Fa-Jun,Hoex Bram,Aberle Armin G.

Funder

NRF

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

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3. J. Libal, R. Petres, T. Buck, R. Kopecek, G. Hahn, R. Ferre, M. Vetter, I. Martn, K. Wambach, I. Roever, P. Fath, N-type multicrystalline silicon solar cells: BBr3-diffusion and passivation of p+-diffused silicon surfaces, in: Proceedings of 20th European Photovoltaic Solar Energy Conference, Paris, 2005, pp. 793–796.

4. M.J. Kerr, Surface, Emitter and bulk recombination in silicon and development of silicon nitride passivated solar cells, in: Faculty of Engineering and Information Technology, Department of Engineering, Australian National University, Canberra, 2002.

5. J. Benick, High-efficiency n-type solar cells with a front side boron emitter, in, Albert-Ludwigs-University of Freiburg, 2010, 194 pp.

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