POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties-Reference-Cited by-同舟云学术

POx/Al2O3 Stacks for c-Si Surface Passivation: Material and Interface Properties

Published:2021-10-12 Issue:10 Volume:3 Page:4337-4347
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Theeuwes Roel J.¹^ORCID,Melskens Jimmy¹^ORCID,Black Lachlan E.²^ORCID,Beyer Wolfhard³,Koushik Dibyashree¹^ORCID,Berghuis Wilhelmus J. H.¹^ORCID,Macco Bart¹^ORCID,Kessels Wilhelmus M. M.¹^ORCID

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands

2. School of Engineering, The Australian National University, Canberra Australian Capital Territory 2600, Australia

3. IEK5-Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

Funder

Ministerie van Economische Zaken

Australian Renewable Energy Agency

Nederlandse Organisatie voor Wetenschappelijk Onderzoek

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00516

Reference67 articles.

1. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

2. Dielectric surface passivation for silicon solar cells: A review

3. Surface passivation of crystalline silicon solar cells: a review

4. Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects

5. Explorative studies of novel silicon surface passivation materials: Considerations and lessons learned

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