Plasma treatment for chemical SiOx enables excellent passivation of p-type polysilicon passivating contact featuring the lowest J of ∼6 fA/cm2
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials
Reference48 articles.
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1. Development and Characterization of N2O-Plasma Oxide Layers for High-Temperature p-Type Passivating Contacts in Silicon Solar Cells;ACS Applied Materials & Interfaces;2024-08-30
2. Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells;ENERGY & ENVIRONMENTAL MATERIALS;2024-07-12
3. Advancing Monolithic Perovskite/TOPCon Tandem Solar Cells by Customizing Industrial‐Level Micro‐Nano Structures;Advanced Functional Materials;2024-04-11
4. Passivating Contacts for Crystalline Silicon Solar Cells: An Overview of the Current Advances and Future Perspectives;Advanced Energy Materials;2024-04
5. Current status and challenges for hole-selective poly-silicon based passivating contacts;Applied Physics Reviews;2024-02-09
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