High-efficiency selective boron emitter formed by wet chemical etch-back for n-type screen-printed Si solar cells
Author:
Affiliation:
1. Georgia Institute of Technology, 777 Atlantic Drive, Atlanta, Georgia 30332-0250, USA
2. Suniva Inc., 5765 Peachtree Industrial Blvd., Norcross, Georgia 30092, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4973626
Reference23 articles.
1. Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics
2. Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency
3. Carrier-selective contacts for Si solar cells
4. Achievement of More Than 25% Conversion Efficiency With Crystalline Silicon Heterojunction Solar Cell
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