Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells-Reference-Cited by-同舟云学术

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Yellow-emitting Si-doped GaN: Favorable characteristics for intermediate band solar cells

Published:2015-01 Issue: Volume:132 Page:544-548
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Liao Jen-Hsiung,Huang Hsiao-Wei,Cheng Lung-Chieh,Liu Hsueh-Hsing,Chyi Jen-Inn,Cai Dong-Po,Chen Chii-Chang,Lai Kun-Yu

Funder

National Science Council

National Central University

Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Unusual properties of the fundamental band gap of InN;Wu;Appl. Phys. Lett.,2002

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system;Wu;J. Appl. Phys.,2003

3. On the lattice parameters of GaN;Darakchieva;Appl. Phys. Lett.,2007

4. Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy;Dimakis;Appl. Phys. Lett.,2006

5. InGaN solar cells: present state of the art and important challenges;Bhuiyan;IEEE J. Photovoltaics,2012

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Catching Single Molecules with Plasmonic InGaN Quantum Dots;Advanced Optical Materials;2023-05-08

2. Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells;Applied Physics Letters;2021-01-11

3. Production of GaN/n–Si thin films using RF magnetron sputtering and determination of some physical properties: argon flow impacts;Journal of the Australian Ceramic Society;2019-11-14

4. Structural, Morphological, and Optical Characterization of GaN/p-Si Thin Films for Various Argon Flow Rates;JOM;2019-10-29

5. Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film;Materials Science-Poland;2019-09-01

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