Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202136
Reference20 articles.
1. Optical properties of InN—the bandgap question
2. Acceptor states in the photoluminescence spectra ofn−InN
3. Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy
4. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
5. The role of nucleation temperature in In-face InN-on-GaN(0001) growth by plasma-assisted molecular beam epitaxy
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