Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures-Reference-Cited by-同舟云学术

Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures

Published:2017-12 Issue: Volume:644 Page:45-51
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yang Chung-I,Chang Ting-Chang,Chen Bo-Wei,Chou Wu-Ching,Liao Po-Yung,Lin Sung-Chun,Yeh Cheng-Yen,Chang Chia-Sen,Tsai Cheng-Ming,Yu Ming-Chang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Developments in nanocrystal memory

2. Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

3. Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

4. Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

5. Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application

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1. Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin-Film Transistors With Source-Connected Field Plate;IEEE Transactions on Electron Devices;2023-09

2. Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al₂O₃ Passivation in Moist Environment;IEEE Transactions on Electron Devices;2022-06

3. Hot-Carrier Effects in a-InGaZnO Thin-Film Transistors Under Pulse Drain Bias Stress;IEEE Transactions on Electron Devices;2021-06

4. Dynamic switching-induced back-carrier-injection in a-InGaZnO thin film transistors;Journal of Physics D: Applied Physics;2020-10-22