Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices-Reference-Cited by-同舟云学术

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Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices

Published:2011 Issue:3 Volume:14 Page:H135
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Tsai Yu-Ting,Chang Ting-Chang,Lin Chao-Cheng,Chen Shih-Cheng,Chen Chi-Wen,Sze Simon M.,Yeh (Hung) Fon-Shan,Tseng Tseung-Yuen

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference21 articles.

1. Direct observation of oxygen movement during resistance switching in NiO/Pt film

2. The missing memristor found

3. Resistance Switching and Formation of a Conductive Bridge in Metal/Binary Oxide/Metal Structure for Memory Devices

4. Resistance switching of Au-implanted-ZrO2 film for nonvolatile memory application

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