Electronic structure of amorphous InGaO3(ZnO)0.5 thin films-Reference-Cited by-同舟云学术

Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

Published:2009-12 Issue:4 Volume:518 Page:1079-1081
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Cho Deok-Yong,Song Jaewon,Hwang Cheol Seong,Choi Woo Seok,Noh T.W.,Kim J.-Y.,Lee H.-G.,Park B.-G.,Cho S.-Y.,Oh S.-J.,Jeong Jong Han,Jeong Jae Kyeong,Mo Yeon-Gon

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

3. The phase relations in the In2O3Ga2ZnO4ZnO system at 1350°C

4. Amorphous transparent conductive oxide InGaO3(ZnO)m (m≤ 4): a Zn4s conductor

5. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

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