In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate-Reference-Cited by-同舟云学术

In situ excimer laser annealing of low-temperature low-pressure chemical vapour deposition grown polycrystalline silicon: influence of metal diffusion on the film morphology and on the growth rate

Published:2004-06 Issue:1-2 Volume:458 Page:1-8
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Loreti S.,Santoni A.,Lancok J.,Menicucci I.,Minarini C.,Della Sala D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. Large grain polycrystalline silicon by low‐temperature annealing of low‐pressure chemical vapor deposited amorphous silicon films

2. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors

3. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters

4. Silicide formation and silicide‐mediated crystallization of nickel‐implanted amorphous silicon thin films

5. Transmission electron microscopy studies of metal-induced crystallization of amorphous silicon

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