Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode-Reference-Cited by-同舟云学术

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Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

Published:2013-05 Issue: Volume:534 Page:603-608
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Peta Koteswara Rao,Park Byung-Guon,Lee Sang-Tae,Kim Moon-Deock,Oh Jae-Eung,Kim Tae-Geun,Reddy V. Rajagopal

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference38 articles.

1. Fundamental energy gap of GaN from photoluminescence excitation spectra

2. Buffer Thickness Contribution to Suppress Vertical Leakage Current With High Breakdown Field (2.3 MV/cm) for GaN on Si

3. Monte Carlo simulation of electron transport in gallium nitride

4. Effects of AlN interlayer on the transport properties of nearly lattice-matched InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

5. AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures

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1. Study of Leakage Current Transport Mechanisms in Pseudo-Vertical GaN-on-Silicon Schottky Diode Grown by Localized Epitaxy;Crystals;2024-06-14

2. Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures;Journal of Vacuum Science & Technology A;2024-02-07

3. Scrutinizing Current Transport Properties in Vertical GaN Schottky Junctions;Brazilian Journal of Physics;2023-12-28

4. Effects of PEDOT:PSS and crystal violet interface layers on current-voltage performance of Schottky barrier diodes as a function of temperature and variation of diode capacitance with frequency;Current Applied Physics;2022-07

5. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis;Journal of Semiconductors;2022-06-01

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