Epitaxy solutions for Ge MOS technology-Reference-Cited by-同舟云学术

Epitaxy solutions for Ge MOS technology

Published:2006-06 Issue:1-2 Volume:508 Page:292-296
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Leys F.E.,Bonzom R.,Loo R.,Richard O.,De Jaeger B.,Van Steenbergen J.,Dessein K.,Conard T.,Rip J.,Bender H.,Vandervorst W.,Meuris M.,Caymax M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, IEEE International Electron Devices Meeting (IEDM) 2002 Technical Digest, Paper 17.3, pp. 437–440, San Francisco, CA, December 8–11, 2002.

2. For a comprehensive review, see e.g. B. Van Elshocht et al. ICSI 2005, in press.

3. B. De Jaeger et al., INFOS 2005, in press.

4. E. Bauer, I.Z. Kristallgr. 110, 372–394 (1958).

5. Stress-induced layer-by-layer growth of Ge on Si(100)

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