Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes-Reference-Cited by-同舟云学术

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Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes

Published:2011-01 Issue:7 Volume:519 Page:2241-2246
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Byeon Kyeong-Jae,Hong Eun-Ju,Park Hyoungwon,Cho Joong-Yeon,Lee Seong-Hwan,Jhin Junggeun,Baek Jong Hyeob,Lee Heon

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

2. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes

3. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

4. Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals

5. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency

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2. Reformation of solution process NiO thin films with UV curable polymers for the self‐alignment of liquid crystals;Polymers for Advanced Technologies;2023-02-21

3. Controlled nano structures on solution-processed inorganic/organic film for liquid crystal application;Journal of Sol-Gel Science and Technology;2022-09-30

4. Nanopatterning of Polymer/Gallium Oxide Thin Films by UV-Curing Nanoimprint Lithography for Liquid Crystal Alignment;ACS Applied Nano Materials;2022-01-04

5. High-quality nano structures fabrication on organic/inorganic hybrid thin films by using UV nanoimprint lithography;Materials Chemistry and Physics;2021-09

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