Electronic properties of intrinsic and doped amorphous silicon carbide films-Reference-Cited by-同舟云学术

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Electronic properties of intrinsic and doped amorphous silicon carbide films

Published:2006-07 Issue: Volume:511-512 Page:290-294
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Vetter M.,Voz C.,Ferre R.,Martín I.,Orpella A.,Puigdollers J.,Andreu J.,Alcubilla R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Properties and structure ofa‐SiC:H for high‐efficiencya‐Si solar cell

2. Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films

3. Proc. 17th Europ. Photovoltaic Solar Energy Conf. Munich;Martín,2001

4. Physics of Amorphous Silicon–Carbon Alloys

5. The influence of “starving plasma” regime on carbon content and bonds in a-Si1−xCx:H thin films

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3. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films;SOLID STATE ELECTRON;2018

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