Influence of Amorphous Silicon Carbide Intermediate Layer in the Back-Contact Structure of Cu2ZnSnSe4Solar Cells-Reference-Cited by-同舟云学术

Influence of Amorphous Silicon Carbide Intermediate Layer in the Back-Contact Structure of Cu2ZnSnSe4Solar Cells

Published:2016-09 Issue:5 Volume:6 Page:1327-1332
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

Colina Monica,Martin Isidro,Giraldo Sergio,Sanchez-Gonzalez Yudania,Kondrotas Rokas,Oliva Florian,Izquierdo-Roca Victor,Perez-Rodriguez Alejandro,Coll Arnau,Alcubilla Ramon,Saucedo Edgardo

Funder

Ministerio de Economía y Competitividad de España (MINECO) under the NOVACOST project

DopLa-IBC project

EEEA-Grant program under the project FLEXART

MINECO

PTA fellowship

“Ramon y Cajal” fellowship

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/7547334/07527695.pdf?arnumber=7527695

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