Improvement of Er-silicide formation on Si(100) by W capping-Reference-Cited by-同舟云学术

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Improvement of Er-silicide formation on Si(100) by W capping

Published:2008-04 Issue:12 Volume:516 Page:4252-4257
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Huang W.,Ru G.P.,Jiang Y.L.,Qu X.P.,Li B.Z.,Liu R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Low Schottky barrier of rare‐earth silicide onn‐Si

2. Electronic transport properties of epitaxial erbium silicide/silicon heterostructures

3. Schottky-Barrier S/D MOSFETs With High-<tex>$Kappa$</tex>Gate Dielectrics and Metal-Gate Electrode

4. N-Type Schottky Barrier Source/Drain MOSFET Using Ytterbium Silicide

5. Surface morphology of erbium silicide

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-Free Erbium Silicide Formation Using an Ultrathin Ni Interlayer;ACS Applied Materials & Interfaces;2014-08-14

2. Silicide Formation Process of Er Films with Ta and TaN Capping Layers;ACS Applied Materials & Interfaces;2013-11-25

3. Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer;Thin Solid Films;2012-04

4. Erbium Silicide Growth in the Presence of Residual Oxygen;Journal of The Electrochemical Society;2011-05-11

5. Source/drain technologies for the scaling of nanoscale CMOS device;Solid State Sciences;2011-02

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