Thermal effect of multi-quantum barriers within InGaN/GaN multi-quantum well light-emitting diodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. The Blue Laser Diode;Nakamura,1997
2. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
3. Fabrication of high-temperature superconducting Josephson junctions on substrates patterned by focused ion beam
4. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
5. 400-nm InGaN-GaN and InGaN-AlGaN multiquantum well light-emitting diodes
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5. A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures;Journal of Physics D: Applied Physics;2014-01-10
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