Ga-doped ZnO films by magnetron sputtering at ultralow discharge voltages: Effects of defect annihilation-Reference-Cited by-同舟云学术

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Ga-doped ZnO films by magnetron sputtering at ultralow discharge voltages: Effects of defect annihilation

Published:2017-12 Issue: Volume:644 Page:16-22
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Chen Yuyun,Meng Fanping,Ge Fangfang,Huang Feng

Funder

National Basic Research Program of China

Zhejiang Postdoctoral Preferential Foundation

State Key Laboratory of Advanced Technology for Float Glass

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. Criteria for choosing transparent conductors;Gordon;MRS Bull.,2000

2. Transparent conducting oxide semiconductors for transparent electrodes;Minami;Semicond. Sci. Technol.,2005

3. Properties of Ga-doped ZnO films;Miyazaki;J. Non-Cryst. Solids,1997

4. Dependence of the resistivity and the transmittance of sputter-deposited Ga-doped ZnO films on oxygen partial pressure and sputtering temperature;Kim;J. Mater. Sci.,2007

5. A revised growth model for transparent conducting Ga doped ZnO films: improving crystallinity by means of buffer layers;Abduev;Plasma Process. Polym.,2015

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2. Thermal evolution of point defects in indium doped ZnO transparent conducting films;Thin Solid Films;2020-11

3. Effect of oxygen pressure on GZO film as active layer of the TFT fabricated at room temperature;Superlattices and Microstructures;2020-01

4. Local structural changes induced by ion bombardment in magnetron sputtered ZnO: Al films: Raman, XPS, and XAS study;Surface and Coatings Technology;2019-05

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