Effects of thicknesses of Si/Al/Si composite films and annealing temperature on metal-induced si crystallization efficiency, voids, and electrical properties-Reference-Cited by-同舟云学术

Effects of thicknesses of Si/Al/Si composite films and annealing temperature on metal-induced si crystallization efficiency, voids, and electrical properties

Published:2016-01 Issue: Volume:599 Page:151-160
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Han Chang-Fu,Hu Guo-Shiang,Li Tse-Chang,Lin Jen Fin

Funder

Bureau of Energy, Ministry of Economic Affairs

Center for Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, R.O.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference25 articles.

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3. Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon;Nast;J. Appl. Phys.,2000

4. Fabrication and characterization of highly efficient thin-film polycrystalline-silicon solar cells based on aluminium-induced crystallization;Gordon;Thin Solid Films,2008

5. Solid-phase crystallized Si films on glass substrates for thin film solar cells;Bergmann;Sol. Energy Mater. Sol. Cells,1997

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