An assessment on crystallization phenomena of Si in Al/a-Si thin films via thermal annealing and ion irradiation-Reference-Cited by-同舟云学术

An assessment on crystallization phenomena of Si in Al/a-Si thin films via thermal annealing and ion irradiation

Published:2020 Issue:8 Volume:10 Page:4414-4426
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Maity G.¹²³⁴,Dubey S.⁵⁶⁷⁸⁴,El-Azab Anter⁹¹⁰¹¹,Singhal R.⁵¹²¹³⁴,Ojha S.¹⁴¹⁵⁴,Kulriya P. K.¹⁴¹⁵⁴^ORCID,Dhar S.⁵¹⁶⁴,Som T.¹⁷¹⁸⁴,Kanjilal D.¹⁴¹⁵⁴,Patel Shiv P.¹²³⁴^ORCID

Affiliation:

1. Department of Pure & Applied Physics

2. Guru Ghasidas Vishwavidyalaya (A Central University)

3. Bilaspur-495009

4. India

5. Department of Physics

6. School of Engineering

7. University of Petroleum & Energy Studies

8. Dehradun-248007

9. Material Science & Engineering

10. Purdue University

11. USA

12. Malaviya National Institute of Technology

13. Jaipur-302017

14. Inter University Accelerator Centre

15. New Delhi-110067

16. Shiv Nadar University

17. Institute of Physics

18. Bhubaneswar-751005

Abstract

In the present study, crystallization of amorphous-Si (a-Si) in Al/a-Si bilayer thin films under thermal annealing and ion irradiation has been investigated for future solar energy materials applications.

Funder

Department of Atomic Energy, Government of India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/C9RA08836A

Reference68 articles.

1. Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening

2. A review of thin-film crystalline silicon for solar cell applications. Part 2: Foreign substrates

3. Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells