Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures-Reference-Cited by-同舟云学术

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Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structures

Published:2012-02 Issue:8 Volume:520 Page:3276-3278
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Sadoh T.,Kurosawa M.,Heya A.,Matsuo N.,Miyao M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors

2. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors

3. Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor

4. A Logic Nanotechnology Featuring Strained-Silicon

5. Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

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1. Application of μRBS/ERDA system in microstructured devices;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2021-04

2. Development of external coincidence ERDA: Hydrogen analysis of moist samples;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-07

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