Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition

Published:2009-07 Issue:18 Volume:517 Page:5537-5542
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Huang Yen-Chin,Li Zhen-Yu,Chen Hung-hsin,Uen Wu-Yih,Lan Shan-Ming,Liao Sen-Mao,Huang Yu-Hsiang,Ku Chien-Te,Chen Meng-Chu,Yang Tsun-Neng,Chiang Chin-Chen

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Potential of amorphous silicon for solar cells

2. Zinc-based buffer layer in the Cu(InGa)Se 2 thin film solar cells

3. RF sputter deposition of the high-quality intrinsic and n-type ZnO window layers for Cu(In,Ga)Se2-based solar cell applications

4. First-principles study of native point defects in ZnO

5. High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

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