A theoretical study on initial growth mechanism of ZrO2 film using cyclopentadienyl-type precursor-Reference-Cited by-同舟云学术

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A theoretical study on initial growth mechanism of ZrO2 film using cyclopentadienyl-type precursor

Published:2011-03 Issue:11 Volume:519 Page:3716-3721
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Ren Jie,Cui Chengxing,Zhou Guangfen,Liu Yanchun,Hu Yongqi,Wang Baozhu

Funder

National Natural Science Foundation of China

Natural Science Foundations of Hebei Province

Hebei University of Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. The electronic structure at the atomic scale of ultrathin gate oxides

2. Pushing the Limits

3. High-κ gate dielectrics: Current status and materials properties considerations

4. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications

5. High-κ Dielectric Materials for Microelectronics

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4. Photofragmentation Pathways for Gas-Phase Lanthanide Tris(isopropylcyclopentadienyl) Complexes;Organometallics;2016-10-05

5. Theoretical study on the initial reaction mechanisms of ansa-metallocene zirconium precursor on hydroxylated Si(1 0 0) surface;Journal of Molecular Modeling;2016-04-30

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