Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applications

Author:

Barbos Corina,Blanc-Pelissier Danièle,Fave Alain,Botella Claude,Regreny Philippe,Grenet Geneviève,Blanquet Elisabeth,Crisci Alexandre,Lemiti Mustapha

Funder

Région Rhône-Alpes (ARC-4 Energies)

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells;Dingemans;J. Vac. Sci. Technol.,2012

2. n-Type silicon- enabling efficiencies >20% in industrial production;Glunz,2010

3. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters;Benick;Appl. Phys. Lett.,2008

4. Silicon surface passivation by Al2O3: effect of ALD reactants;Repo;Energy Procedia,2011

5. Silicon surface passivation by atomic layer deposited Al2O3;Hoex;J. Appl. Phys.,2008

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