Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating-Reference-Cited by-同舟云学术

Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

Published:2014-04 Issue: Volume:557 Page:10-13
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Abe Yusuke,Sakuraba Masao,Murota Junichi

Funder

Ministry of Education, Culture, Sports, Science and Technology of Japan

Japan Society for the Promotion of Science (JSPS) Core-to-Core Program, A

Advanced Research Networks “International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration”

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

2. Fabrication of high-Ge-fraction strained Si1−xGex/Si hole resonant tunneling diode using low-temperature Si2H6 reaction for nanometer-order ultrathin Si barriers

3. Selective Si epitaxial growth by plasma‐enhanced chemical vapor deposition at very low temperature

4. Toward a better physical understanding of a-Si:H/c-Si heterojunction solar cells

5. Low-Temperature Epitaxy of Compressively Strained Silicon Directly on Silicon Substrates

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1. Electron-cyclotron resonance Ar plasma-induced electrical activation of B atoms without substrate heating in B doped Si epitaxial films on Si(100);Materials Science in Semiconductor Processing;2020-03

2. Electronic properties of Si/Si-Ge Alloy/Si(100) heterostructures formed by ECR Ar plasma CVD without substrate heating;Materials Science in Semiconductor Processing;2017-11

3. Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating;Materials Science in Semiconductor Processing;2017-11

4. Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating;Science and Technology of Advanced Materials;2017-04-27

5. Computational Modeling of a Chemical Vapor Deposition Reactor for Epitaxial Silicon Formation;Science of Advanced Materials;2016-03-01