Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen-Reference-Cited by-同舟云学术

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Effect oxygen exposure on the quality of atomic layer deposition of ruthenium from bis(cyclopentadienyl)ruthenium and oxygen

Published:2008-09 Issue:21 Volume:516 Page:7345-7349
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Park Sang-Joon,Kim Woo-Hee,Maeng W.J.,Yang Y.S.,Park C.G.,Kim Hyungjun,Lee Kook-Nyung,Jung Suk-Won,Seong W.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. PZT MIM Capacitor With Oxygen-Doped Ru-Electrodes for Embedded FeRAM Devices

2. Improvements in Growth Behavior of CVD Ru Films on Film Substrates for Memory Capacitor Integration

3. Electrical Properties of Crystalline Ta2O5with Ru Electrode

4. Application of Ru-based gate materials for CMOS technology

5. The application of atomic layer deposition for metallization of 65 nm and beyond

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1. Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films;Chemistry of Materials;2024-08-21

2. In vacuo studies on reaction mechanisms in ALD processes of ruthenium and platinum films;Applied Surface Science;2024-03

3. Growth characteristics and properties of RuAlO hybrid films fabricated by atomic layer deposition;Applied Surface Science;2023-01

4. Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD;Journal of Materials Chemistry C;2023

5. Role of dose optimization in Ru atomic layer deposition for low resistivity films;Journal of Vacuum Science & Technology B;2023-01

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