Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer-Reference-Cited by-同舟云学术

Low-temperature and global epitaxy of GaN on amorphous glass substrates by molecular beam epitaxy via a compound buffer layer

Published:2018-09 Issue: Volume:662 Page:174-179
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Yu Jiadong,Wang Jian,Yu Wangyang,Wu Chao,Lu Boyang,Deng Jun,Zhang Zixuan,Li Xiang,Hao Zhibiao,Wang Lai,Han Yanjun,Luo Yi,Sun Changzheng,Xiong Bing,Li Hongtao

Funder

National Key Research and Development Program

National Basic Research Program of China

National Natural Science Foundation of China

High Technology Research and Development

Science and Technology Planning

Beijing Municipal Science and Technology

Tsinghua University Initiative Scientific Research Program

State Key Laboratory on Integrated Optoelectronics

CAEP Microsystem and THz Science and Technology Foundation

Science Challenge Project

Collaborative Innovation Centre of Solid-State Lighting and Energy-Saving Electronics

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

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