Author:
Congedo Gabriele,Wiemer Claudia,Lamperti Alessio,Cianci Elena,Molle Alessandro,Volpe Flavio G.,Spiga Sabina
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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4. Charge-trapping memory cell of SiO2∕SiN∕high‐k dielectric Al2O3 with TaN metal gate for suppressing backward-tunneling effect
5. Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3
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