Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge-Reference-Cited by-同舟云学术

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Controllable growth of stable germanium dioxide ultra-thin layer by means of capacitively driven radio frequency discharge

Published:2016-01 Issue: Volume:599 Page:49-53
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Svarnas P.,Botzakaki M.A.,Skoulatakis G.,Kennou S.,Ladas S.,Tsamis C.,Georga S.N.,Krontiras C.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Semicond;Xie;Sci. Technol.,2012

2. Formation and stability of germanium oxide induced by atomic oxygen exposure

3. Germanium-based Technologies: From Materials to Devices;Claeys,2007

4. Oxygen transport and GeO2 stability during thermal oxidation of Ge

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1. Monolithically Integrated Germanium Photodiodes with Low Dark Current and High Detectivity;CLEO 2024;2024

2. Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide;Journal of The Electrochemical Society;2023-10-01

3. XPS analysis and electrical conduction mechanisms of atomic layer deposition grown Ta2O5 thin films onto p-Si substrates;Journal of Vacuum Science & Technology A;2020-05

4. Interfacial Characterization and Transport Conduction Mechanisms in Al|HfO2|p-Ge Structures: Energy Band Diagram;Semiconductors;2020-05

5. Modern Techniques in Synthesis of Organometallic Compounds of Germanium;Basic Concepts Viewed from Frontier in Inorganic Coordination Chemistry;2018-12-19

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