Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates-Reference-Cited by-同舟云学术

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Epitaxial growth of Er2O3 films on oxidized Si(111) and Si(001) substrates

Published:2006-06 Issue:1-2 Volume:508 Page:86-89
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Zhu Y.Y.,Xu R.,Chen S.,Fang Z.B.,Xue F.,Fan Y.L.,Yang X.J.,Jiang Z.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Epitaxial growth of Pr2O3 on Si(111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing

2. Photoemission andab initiotheoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001)

3. Structural and electrical quality of the high-k dielectric Y2O3 on Si (001): Dependence on growth parameters

4. Internal photoemission of electrons and holes from (100)Si into HfO2

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1. Rare earth-doped ceramic coatings: Analysis of microstructure, mechanical properties, and slurry Erosion resistance using high pressure-high velocity oxy-liquid fuel deposition;International Journal of Refractory Metals and Hard Materials;2024-12

2. Thermal atomic layer deposition of Er₂O₃ films from a volatile, thermally stable enaminolate precursor;Dalton Transactions;2023

3. Hydrogen isotope role in the crystal orientation change of erbium oxide coatings;Journal of Nuclear Materials;2020-01

4. Furnace O2 Annealing Growth of Er2O3 Thin Film for Gate Stack Capacitance at Low Temperature;Science of Advanced Materials;2017-07-01

5. Engineering of the Interface between Silicon and Rare-Earth-Oxide Buffer for GaN Growth;ECS Transactions;2013-08-31

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